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Page 71 2. Page 73 3. Page 84 3. Page 85 3. Page 87 3. Page 90 3. Page 91 3. Page 93 3. Page 95 3. View larger. Request a copy. Buy this product. Download instructor resources. Alternative formats. For undergraduate electrical engineering students or for practicing engineers and scientists interested in updating their understanding of modern electronics.
One of the most widely used introductory books on semiconductor materials, physics, devices and technology, Solid State Electronic Devices aims to: 1 develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2 provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated. Students are brought to a level of understanding that will enable them to read much of the current literature on new devices and applications.
This program will provide a better teaching and learning experience—for you and your students. It will help:. The authors have chosen devices to discuss that are broadly illustrative of important principles at the undergraduate level. Pearson offers special pricing when you package your text with other student resources. If you're interested in creating a cost-saving package for your students, contact your Pearson rep.
We're sorry! We don't recognize your username or password. Please try again. We will update the links as soon as possible. Your email address will not be published. Save my name, email, and website in this browser for the next time I comment. Solid State Electronic Devices is intended for undergraduate electrical engineering students or for practicing engineers and scientists interested in updating their understanding of modern electronics One of the most widely used introductory books on semiconductor materials, physics, devices and technology, Solid State Electronic Devices aims to: 1 develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2 provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated.
Teaching and Learning Experience This program will provide a better teaching and learning experience—for you and your students.
It will help: Provide a Sound Understanding of Current Semiconductor Devices: With this background, students will be able to see how their applications to electronic and optoelectronic circuits and systems are meaningful. Incorporate the Basics of Semiconductor Materials and Conduction Processes in Solids: Most of the commonly used semiconductor terms and concepts are introduced and related to a broad range of devices.
Depletion capacitance dominates in reverse bias. How are they defined? Alternating current signals are typically smaller than direct current bias. Both the substrate and epitaxial layer have a cubic crystal structure in the unstrained state.
Also, qualitatively show a 2-D view of the crystal structure in relation to the band diagram. Epitaxial Film Substrate JfJ. Assume no interface traps. TI metal semiconductor vacuum level -F,s energy semiconductor A postition b Is this a Schottky contact or an ohmic contact? Ohmic contact Chapter 6 Self-Quiz Question 1 Label the following MOS capacitor band diagrams as corresponding to accumulation, weak inversion, depletion, strong inversion, flatband or threshold.
Use each possibility only once. An active device gives power gain. The power comes from the direct current power supply. Which is preferable? A voltage controlled device has much higher input impedence than a current controlled device and is preferable because it consumes less power. Question 3 For Parts a through c below, consider the following low-frequency gate capacitance per unit area vs. Same as above. SV Circle one choice below. Circle one. What clearly physically unrealistic aspect of these MOSFET characteristics besides less than smooth curves should have drawn suspicion?
Chapter 7 Self-Quiz Question 1 Consider the following bipolar junction transistor BJT circuit and somewhat idealized transistor characteristics where, in particular, the voltage drop across the forward biased base-emitter junction is assumed to be constant and equal to IV for simplicity. Sketch in the Fermi level as a function of position. Qualitative accuracy is sufficient.
Cincrease unchanged I decrease b base transport factor B? If we increase the base doping, qualitatively explain how the various components change. If base doping increases, the injected electrons lost to recombination and holes supplied by the base contact for recombination increase, the electrons reaching the reverse-biased collector junction decrease because of lower electron concentration in the base, the thermally generated electrons and holes decrease slightly, and the holes injected across the emitter junction is unchanged.
Question 5 Would decreasing the base doping of the BJT increase, decrease or leave essentially unchanged circle the correct answers : a emitter injection efficiency 7? Assume essentially all recombination is direct and results in light emission. The forward bias current consists of holes injected from a contact to the left and electrons injected from a contact to the right.
Region s B Electron quasi Fermi level Fn' 0.
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